X-ray and dielectric studies of ferroelectric phase in the Ba1-x(Yb0.5 Na0.5)x TiO3 system for low doping level
L. Khemakhem, I. Kriaa, M. Derbel2, N. Abdelmoula
(137-145)

Influence of Ru3+ ions at Al/GaAs interface on Schottky diodes
H. Mazari, Z. Benamara, K. Ameur, N. Benseddik, O. Bonnaud, R. Olier, B. Gruzza4
(147-156)

Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices
Alwan M. Alwan, Narges Z. Abdulzahra, N. M. Ahmed, N. H. A. Halim
(157-161)

Electronic and optical properties of the express purified SWCNTs produced by HiPCO process
Badis Bendjemil
(173-182)

Dielectric and electric investigations on Rb1-x(NH4)xHSO4 solid solution
L. Khemakhem, A. Kabadou, N. Chabchoub
(183-188)

Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN by optical transmission method
Naser M. Ahmed, Zaliman Sauli, Uda Hashim, Yarub Al-Douri
(189-195)

Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector
Raid A. Ismail, Abdulmhdi T. Rahmitalla, Nasser K.Mahdi
(197-204)